Petrus' R. Fabrication and photoelectric properties of structures on the basis of multicomponent chalcogenides.

The technology of crystal growth by directed crystallization and chemical transport reactions of InSe, In2Se3 single crystals and Cd1-хMnхTe (х=0,00-0,70) solid solutions crystals was improved. The crystal composition, structure and physical properties were investigated.The new technology of energy barrier fabrication by thermal air treatment of growth crystals was proposed. By the first time the n-Ox/n-InSe, Ox/Cd1-хMnхTe (х=0,00-0,70) heterostructures with rectifying and photosensitive properties was fabricated. The current-voltage characteristics and spectra of photoconversion relative quantum efficiency for unpolarized and for n-Ox/n-InSe in linearly-polarized light of fabricated heterostructures was investigated. The wide-band photosensitivity and the photopleochroism spectral dependence for the oblique of incidence of linearly-polarized light in created heterojunctions is observed. By the first time fabricated In/n-In2Se3, Al/n-In2Se3 and In/Cd1-хMnхTe Shottky barriers photosensitive to incident photons in a wide energy region (1-3,8 eV, 300 K). The nature of the interband photoactive absorption is investigated. The values of the energy barrier height, the energy of interband optical transitions for In2Se3, Cd1-хMnхTe crystals was determined. The point structures on the InSe single crystals and Cd1-хMnхTe (х=0,00-0,70) solid solution crystals were fabricated by electric discharge method. The current-voltage characteristics and photosensibility of created by the first time structures (Spot weld)/n-InSe, (Spot weld)/Cd1-хMnхTe (х=0,00-0,70) was investigated. The energy band and energy position of exciton pecylarity of phоtоsensitivity spectrum of obtained structures was discussed.The fabricated structures can be applied in wide-range photoconverters of optical radiation and Cd1-хMnхTe solid solutions crystals in devices of magnetic photoelectronic.