Yaremiy S. The crystal structure of near-surface layers of Gd3Ga5O12 single crystals implanted by Нe+ ions

The regularities of the crystal structure of ion-implanted near-surface layers of gadolinium-gallium garnet (GGG) single crystals depending on the dose implantation by He+ ions are analysed in this paper; the main types of radiation defects are identified and their quantitative characteristics are determined too. It is shown that the main types of complex radiation defects formed in the surface layers of GGG single crystals at He+ ion implantation are the dislocation loops. The processes occurring in near-surface layers of He+-implanted GGG single crystals at their natural aging are analysed. It is shown that the natural aging process of He+-implanted layers of GGG single crystals are characterized by two stages. It is determined that the state is completely strained in the plane of ion-implanted GGG single crystals. The effect of ion irradiation on their mechanical properties is shown.