Luniov S. Tenzoeffects in multivalley semiconductors (n-Ge , n-Si).

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U000606

Thesis Registration Form

0411U000606.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

24-02-2011

Specialized Academic Board

Д 32.051.01

Essay

Dissertation is devoted the study of features of tenzoeffects in crystals n-Ge and n-Si at presence of technological and radiation defects. A method for calculating changes position of deep energy levels under the influence of uniaxial elastic deformation on the basis of which were determined pressure coefficients changes the energy gap between the deep energy level of gold and the bottom of the conduction band n-Ge and a deep energy level of the A-centre and the bottom of the conduction band n-Si for different crystallographic directions is offered. The degree of filling deep levels in crystals of n-Ge and n-Si is assessed. The features of intervalley scattering in silicon crystals at high temperatures is investigated.

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Files

aref.doc

dis.doc

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