Romanyuk R. The influence of Bi admixtures, electronic and gamma radiation on the structure and physical properties of amorphous germanium monochalcogenide films

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U001529

Thesis Registration Form

0411U001529.pdf

Applicant for

Romanyuk Roman Romanovych

Specialization

01.04.10 - Фізика напівпровідників і діелектриків

Date of defense

09-02-2011

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The short-range order, electroconductivity mechanism for GeSе-Bi and GeS-Bi condensates and energetic position of recombination centers have been established. It is shown that in 11-15 at. % Bi concentration region the change of conductivity type from p- on n-type occurs. The concentration dependences of the width of optical gaps and refractive index of amorphous films are shown. It is motivated that radiation-induced changes in physical properties of germanium monochalcogenide amorphous condensates can be explained by destruction-polymerization transformations in structure of films.

Thesis supervisor

Mykolaychuk Oleksiy Gordiyovych

Official opponents

Венгренович Роман Дмитрович
Шпотюк Олег Йосипович

Files

aref.DOC

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures