Abashin S. Localized states carriers with deep levels and large-scale electrical heterogeneity in crystals Cd1-xZnxTe and ZnSe

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U001740

Thesis Registration Form

0411U001740.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-02-2011

Specialized Academic Board

Д 76.051.01

Essay

This work was to study localized charge carriers with deep levels and large-scale electrical heterogeneity in crystals CdZnTe and ZnSe. It is shown that the method of scanning photodielectric spectroscopy defined negatively charged and electrically neutral localized state of carriers. Established that prolonged annealing at moderately high temperatures and the effect of ionizing radiation lead to the evolution of the internal elastic and electric fields. It is established that a decisive role in the formation of large-scale electrical heterogeneity in crystals CdZnTe are defects in the growth of nature.

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