Faleyeva O. Simulation of Submicron Heterotransistors with Low-Dimensional Systems

Algorithms and two-dimensional model for analyze the drift of charge carriers in HEMT with quantum dots were developed, the mechanism of the carriers drift velocity increasing in the heterotransistor with quantum dots taking into account the quantum confinement were established. Distributions for potential, drift velocity, electron temperature, concentration of mobile carriers, etc. for HEMT with QDs with the help of two-dimensional numerical model were obtained. It is shown that the drift velocity in the HEMT channel with QDs increases compared with HEMT without QDs due to injection of "cold" electrons from the quantum dots due to impact ionization and tunnelling, and the distance between the heterojunction and a layer of quantum dots is smaller than the wavelength of the optical phonon - due to the quantization of the phonon spectrum. In addition, the increasing of the drift velocity and redistribution of the carrier concentrations observed in double-channel HEMT with QDs. Circuit design model was developed. It's based on the results of physical-topological model. This model allows calculating and analyzing the small signal and noise parameters of submicron and nanoscale multi-channel heterostructures with quantum dots, it's suitable for the optimization of physical and topological parameters of transistors.