Shpylovyy P. Development and investigation of Nb-Al thin-film technology for sensor purposes

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U004325

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

06-07-2011

Specialized Academic Board

Д26.199.01

Essay

This thesis were investigated obtained using different methods of sputtering thin films and structures. Proposed and implemented in the technology of superconducting tunnel junctions the method of tunneling barrier oxidation in the plasma of a DC magnetron. Using method of anodization profiles and proposed mathematical model of the transition layer for two-layer thin film structures the quantitative evaluationof the transition layer thickness as a parameter that affects the quality of superconducting tunnel junctions was carried out. The method of anodization profiles was first applied to construct three-dimensional distribution of thickness depending on each of the films in the area of the substrate and thus defined by the overlap of distributions of thicknesses, which allows to outline the area with a uniform thickness of the films and take it into account when designing photomasks. With the use of the technology were made SQUID detectors for developed at the Institute for Cybernetics magnetometer/ And prototype of detector elements for the registration of radiation in the optical range for the Special Astrophysical Observatory Russian academy of sciences. A technology for the creation of waveguide sensors on a metal substrate on Al-Nb2O5 films, based on the controlled oxidation of Nb films Al-Nb structures by the method of anodizing profiles was proposed. The resulting sensor substrate due to niobium oxide is chemically inert, mechanically stable and promising for use in rapid test systems for biochemical research.

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