Ievtushenko A. Surface excitations in optically anisotropic single crystals ZnO and 6H-SiC in a uniform magnetic field

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U004825

Thesis Registration Form

0411U004825.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

30-09-2011

Specialized Academic Board

Д 61.051.01

Essay

The thesis presents results of investigation by means of spectroscopy methods of external infrared reflection and attenuated total reflection (ATR) for uniaxial optically anisotropic single crystals ZnO and 6H-SiC at the inserting of them in a uniform magnetic field.). It is shown that in the spectra of external infrared reflection of ZnO and 6H-SiC crystals the additional oscillations occur under conditions of the influence of a magnetic field on the crystal. Magnetoreflection effect is first registrated. The mathematical model which helps to obtain the ATR spectra of ZnO and 6H-SiC crystals in the magnetic field is developed. For the first time the excitement of a new branches in ZnO and 6H-SiC was found. Attenuation coefficient of surface polaritones was analyzed.

Read more

Files

aref.doc

dis.doc

dis.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures