Sviridova O. Influence of initial defects on defect formation processes in doping and oxydation

In dissertation defect formation processes in silicon, structures and devices on the basis of silicon are investigated, mechanisms of transformation of initial defects in processes of silicon doping and oxidation are determined, namely: the mechanism of formation of two areas located on different depths from a surface and containing defects, formed at ionic doping of silicon plates, is offered and experimentally confirmed by works of another authors; the mechanism of hardening of p-silicon crystals containing background impurity of oxygen, precipitating on dislocations is established; it is shown, that lamination of monocrystalline silicon plates is an original cause of stacking faults' occurrence in oxidized plates; the mechanism of transformation of microdefects in stacking faults owing to oxidation of silicon plates is described and experimentally confirmed. Temperature dependences of photocurrent amplification factor and of quantum efficiency of infrared silicon p-i-n-photodetectors for different superficial density of dislocations are constructed; mechanisms of change of temperature dependence form of photocurrent amplification factor and of quantum efficiency for infrared silicon p-i-n-photodetectors at increase in superficial density of dislocations are obtained; it is shown, that selection of p-i-n-photodetectors on S-figurativeness of current-voltage characteristic can be used for revealing photodetectors containing areas of disarrangement in the form of polycrystalline silicon.