Golovynskyi S. Optical transitions and photocurrent mechanism in InGaAs/GaAs and SiGe/Si heterostructures with nanoislands

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0412U000989

Thesis Registration Form

0412U000989.pdf

Applicant for

Specialization

  • 01.04.05 - Оптика, лазерна фізика

26-03-2012

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The thesis presents the results of experimental studies of the photoelectric properties of two types of heterostructures InGaAs/GaAs and SiGe/Ge with nanoislands. Lines caused by defective state of the interface and the quantum states of nanoislands in the photoconductivity spectra of InGaAs/GaAs structures are detected. Using the method of thermally stimulated conductivity studied the optical properties of deep defect states and their energy spectrum. The shape of the photoluminescence spectra, photoconductivity, photocurrent kinetics and temperature dependence of the photocurrent are described theoretically.

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Files

aref_Golovynskyi.pdf

dis_Golovynskyi.pdf

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