Shelyuk I. Interaction of gallium and indium arsenides and antimonides with aqueous solutions of H2O2-HBr-solvent.

The thesis is devoted to the investigation of chemical interaction of GaAs, undoped and doped InAs, GaSb and InSb single crystals with the H2O2-HBr-solvent bromine-emerging mixtures. According to the results of mathematical simulation of the experiments 21 diagrams "etchant composition - etching rate" of these crystals in the solutions of H2O2-HBr-ethylene glycol, H2O2-HBr-lactic, H2O2-HBr-tartaric and H2O2-HBr-citric acid with determining the regions of polishing and unpolishing solutions have been constructed. The dependences of the dissolution rates from temperature and rotation speed as well as limiting stages of the dissolution process of semiconductors, the influence of doping on the etching rate and the regions of polishing solutions have been determined. The influence of solvent nature and content of H2O2 on the chemical dissolution rate, polishing properties of the solutions and quality of the treated surfaces has been also determined. Analyzing the temperature dependences of the etching rates it was confirmed the existence of the compensating effect in the kinetics of the GaAs, InAs, InAs(Sn), GaSb and InSb chemical etching by the H2O2-HBr-solvent etchant compositions. According to the measurements of electrode potentials of self-dissolution processes in polishing semiconductor solutions and its dependence on the time of the etching rate, electrochemical transformations occurring at the polishing have been suggested. For the first time the etching rate dependence of the chemical-mechanical polishing on the degree of dilution base polishing solutions H2O2-HBr-organic component of viscous solvents as well as the influence of the their nature and concentration on the polishing properties of the formed etching rate and the condition of polished surface of single crystals have been set. The polishing etchant compositions H2O2-HBr-solvent and technological procedures of the chemical-dynamical and chemical-mechanical polishing for the disturbed layer elimination, controlled thinning of the plates up to reference dimension, the thin layers removing and finishing polishing of single crystals GaAs, InAs, InAs(Sn), GaSb and InSb have been optimized.