Prokopiv V. Crystal-chemistry of intrinsic points defects and homogeneity region of CdTe, SnTe, PbTe.

On the basis of complex crystal-quasichemical analysis (the law of mass action, thermodynamic potentials, crystal-quasichemical formulae) and experimental results the defect structure of pure СdТе, SnTe, РbTe compounds is explored: the type of dominant point defects, charge states and dependences of their concentrations on deviation from stoichiometric composition within the range of homogeneity region are specified.The models of quasichemical reactions of formation of intrinsic point defects are offered, analytical expressions for determination of dependences of concentrations of free current carriers and prevailing intrinsic point defects from technological factors on realization of the two-temperature annealing for crystals and on growing of thin films from a steam phase by the method of hot wall are derived. Using the approximation of experimental values of homogeneity region boundary the constants of equilibrium of corresponding quasichemical reactions are specified.The method of thermodynamic potentials is modified for determination of concentrations and specification of energy parameters of point defects formation in the examined materials and construction of their homogeneity region.The analysis of crystal-quasichemical formulae that determine intrinsic point defects and their complexes in nonstoichiometric crystals is done.