Fediai A. Electron transport and quantum-sized effect in resonant-tunneling diode

Hierarchical set of models is developed within the framework of envelope function formalism. The core models are analytical, numerical one-valley and two-valley models. The last two models are supplied with the methods of adequacy enhancement by taking to account of scattering, real shape of heterobarrier and series resistance. New method is developed which allows taking into account electron transport through metastable energy levels in the emitter quantum well; physical based approximation of heterobarriers was realized for the first time. Adaptive numerical algorithms, realizing each model, is developed and programmed. Checking of correctness of the developed algorithms and respective codes is done by comparison with models, based on transfer matrix formalism. Based on numerical model, simulation tool is developed within Matlab GUI. Main lows of physical processes in RTD are discovered by making numerical experiments. The cause of negative differential resistance region formation and singular peculiarities at the latter is explained; it was defined the influence of geometric dimensions and chemical compound on the parameters of quantum-dimensional effects, distribution of micro- and macroscopic quantities along RTD as well as on current-voltage characteristics. Verification of the model is done by comparison with experimental I-V curves, and it is observed excellent qualitative and quantitative agreement within 5% at the characteristic points.