Grurgula G. Crystal-chemystry of points defects and crystals of Zinc chalcogenides.

Analysis of the defective subsystems in clean ZnX(X=S, Se, Te) and doped ZnX:Cu(Mg, In, O), ZnX:O:Cu(In) zinc chalcogenides and solid solutions on their base ZnSехS1-х, ZnSeхTe1-х, ZnSхTe1-х was performed using methods of crystal chemistry. There were developed crystalquasichemical formulae for the non-stoichiometric n-ZnX, p-ZnX and self-doped n-ZnX:X, p-ZnX:Zn crystals, determined type and charge status of the dominating point defects, found dependences of their concentration (N), concentration of free carriers (n, p), Hall concentration of current carriers (nH) on size and character of stoichiometry deviation and content of self-doped element, established realization conditions of thermodynamic n-p- or p-n-transfers. Crystalchemical mechanisms of zinc chalcogenides doping with elements of different subsystems of Periodic table (Сu, Mg, In, O) were also defined. It has been shown, that if cuprum in the ZnSe:Cu is situated in the internodal segments, magnesium and indium substitute zinc in the cation sublattice, then oxygen in the n-ZnS substitutes chalcogen, and in the p-type - takes root in the internodal segments. Given double doping ZnS(Se):O:Cu, the complexes of different charge status and neutral, single-loaded associates in ZnS(Se):O:In will be formed. On the basis of developed for the first time crystalquasichemical formulae and equations of full electroneutrality for solid solutions ZnSexS1-x, ZnSexTe1-x, ZnSxTe1-x, were established the mechanisms of formation process and defective subsystem and defined formation conditions of thermodynamic n-p- or p-n-transfers in the systems n(p)ZnS-p(n)ZnSe, n(p)ZnSe-p(n)ZnTe, n(p)ZnS-p(n)ZnTe, as well as change of concentration of main carriers n(p) у n(p)ZnS-n(p)ZnSe, n(p)ZnSe-n(p)ZnTe, n(p)ZnS-n(p)ZnTe.