Konoreva O. Penetrating radiation effects on optical and electrophysical characteristics of GaP light emitting diodes.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0412U004539

Thesis Registration Form

0412U004539.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-10-2012

Specialized Academic Board

Д32.051.01

Essay

The theses deal with the study of the radiation defects' influence on the emissivity and electrophysical properties of GaP light emitting diodes (LEDs). Electron accelerator, nuclear reactor and cobalt facility were the sources of penetrating radiation. Study of the optical properties of single crystal samples have revealed that at high fluences of neutrons as well as electrons the destruction of the edge of main absorption band occurred with the shift to the lower quanta energies. The decrease of optical transmission is supported by the drop of the quantum yield of photoluminescence and the bound excitons' line is the most radiation sensitive part of the spectrum. 400-600 С temperature interval is the main phase of recombination intensity recovering.

Read more

Files

aref.doc

dis.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures