Mukhlio M. Electroluminescence and energy spectrum of defects of thin-film planar and edge structures based on ZnS:Er,F and ZnS:Cr

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0412U005279

Thesis Registration Form

0412U005279.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

22-06-2012

Specialized Academic Board

Д26.199.02

Essay

The thesis is devoted to studying radiation characteristics in the near-infrared region of thin-film electroluminescent structures (TFELS) of the planar and edge types based on ZnS:Er,F and ZnS:Cr; determination of their defect energy spectrum; revealing of EL peculiarities in he edge TFELS . Тhe influence of technological factors on EL characteristics of these TFELS was found and explained. Essential peculiarities of radiation characteristics of Er and Cr ions at increasing of the exciting voltage in the edge ZnS:Er,F and ZnS:Cr TFELS were revealed in comparison. These peculiarities evidence that there is an optical amplification of the edge emission and this emission is stimulated.

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Files

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