Zinchenko M. Methods of identification signs formation of nonlinear scatterers

It is shown in dissertation, that the phenomenon of descriptions distortion of semiconductor structure of nonlinear scatterer (NS) at the action of sounding signal (SS) of nonlinear radar (NR) substantially influences on the dispersion picture of components of response signal the effective radius of dispersion of nonlinear products increases with the power-level rise of NR. Secondary unmasking features of semiconductor NS, which were used as identification signs of response signals in nonlinear radio-location, are first discovered and explored: effect of looping area appearance on functional dependence of multiple harmonic level of response signal of semiconductor NS from the power-level of SS; phenomenon of correlation dependence of chaotic degree of response signal of semiconductor NS from the power-level of SS; effect of inertance of distortion processes of current-voltage diagram of semiconductor structures of NS; phenomenon of phases deviation of nonlinear products at varying of power-level of SS of NS and different by value of phases shift for nonlinear products of identical frequency, but different nature of origin multiple harmonic and combination frequency. The conducted researches by means of Volterra series showed, that the type of aerial structures substantially influences on unmasking properties of semiconductor NS. Development of methods of discovery, identification and localization of NS by the secondary unmasking features, which are protected by the patents of Ukraine, is executed. The increase of NS efficiency by the usage of developed methods is achieved by taking to a minimum of influence of such factors as: being in the investigated medium of obstacle structures "metal-oxide-metal"; subjectivity of operator; presence of parasitic directional lobe of emitting aerial.