Hodynyuk I. Structural and scheme modification of functional properties of sensor devices on integral bipolar magneto-transistors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0413U002668

Thesis Registration Form

0413U002668.pdf

Applicant for

Hodynyuk Ivan

Specialization

05.27.01 - Твердотільна електроніка

Date of defense

22-04-2013

Specialized Academic Board

K 76.051.09

Essay

The work is devoted to improving sensor magnetic field devices on integral bipolar magneto-transistors by their structural and scheme modification. It was proposed a new approach and consecution of integral bipolar magneto-transistor SPICE mathematic models developing. Taking into account an influence of parasitic transistor with p-type semiconductor integrated circuit substrate as a collector of this transistor a current redistribution mechanism in magneto-transistor lateral structures was studied.

Thesis supervisor

Hotra Zenon

Official opponents

Вербицький Володимир Григорович
Осадчук Олександр Володимирович

Files

aref.doc

dis.doc

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