Temchenko V. Technologies for formation of functional layers of electronic technique products and equipment for their realisation.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0413U004548

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

21-06-2013

Specialized Academic Board

К 45.052.04

Kremenchuk Mykhailo Ostrohradskyi National University

Essay

In the dissertation new setups for chemical vapor deposition and gas detonation deposition (GDD) of functional layers have been developed. For application in semiconductor solar power engineering the technologies for formation of silicon layers and diamond-like carbon (DLC) films were proposed. It was established that due to deposition of the DLC films the efficiency of solar cells (SC) based on multicrystalline silicon may be improved by the factor 1.3. For the first time, it was shown that the DLC films with low refractive index are prospective to apply as antireflection layers for contact ZnO(Al) layers in thin film SCs. For the first time, it was established that the GDD method allows us to obtain silicon layers onto different substrates. The layers possess high adhesion to the substrates and have structure being close to the initial material structure. The lifetime of non-equilibrium carriers for the obtained GDD layers is close to the value obtained for initial silicon wafers. It was shown that the layer surface is rough that results in light reflection decreasing in the region where the silicon SC is photosensitive. For the first time, a new method for formation of electrode structures based on composite silicon-carbon has been proposed for modern energy saving devices. The method is based on the application of optimized GDD technology. The proposed method enables to obtain the electrode layers with high electrochemical characteristics (electrochemical capacity higher than 1000 mA.h/g) and high cyclic stability (maintenance of capacity at the level 1200 mA.h/g after 200 charge-discharge cycles).

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