Tiagulskyi S. Electroluminescence and charge trapping in SiO2 - Si structures with the rare-earth elements nanoclusters.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0413U004583

Thesis Registration Form

0413U004583.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

26-05-2013

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

Dissertation is devoted to the study of processes of clustering of rare-earth impurities, electroluminescence exitation and the processes of generation and accumulation of charge and electroluminescence quenching in the light-emitting structures of the metal-oxide silicon-silicon oxide layers implanted with ions of rare-earth elements Ce +, Eu +, Gd +, Tb + , Er + and Tm +. Post-implantation annealing was carried out at temperatures of 800 ° C - 1100 ° C. In particular, the data in the thesis presented on the effect of the clustering process on the spectral characteristics of light emitting structures and studied the correlation between the generation and accumulation of charge in the silicon oxide layers in the high-field hot electron injection process and the degradation of the rare earth impurities electroluminescence, as well as the corresponding models to explain the process.

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Files

Disert.doc

aref.doc

aref.doc

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