Nakonechnyi I. The influence of Cd0.9Zn0.1Te crystal annealing thermodynamic conditions on the point and bulk defect system transformations. - manuscript.

Point and microstructural defects in Cd0.9Zn0.1Te crystals are investigated. New effect of sharp electrical conductivity increasing was observed. It happens during the thermal annealing of the sample at 770 K. It is explained by the diffusion of impurities from the Tellurium-based inclusions The behavior of point defects in Cd0.9Zn0.1Te crystals is discussed. Dominating point defects are found. Modelling of temperature and pressure dependences of the point defect concentrations was done. Results were compared to the point defect structure of undoped CdTe. Methods of the post-grown annealing of the Cd0.9Zn0.1Te crystals, aiming removal of the second-phase inclusions and remaining of the high initial resistivity were improved. Short-time (0.5-1 hrs) annealing are proposed to remove inclusions. Two-step annealing is proposed to obtain the high resistivity of the samples. The influence of annealing atmosphere is discussed. Migration of inclusions in the Cd0.9Zn0.1Te under the temperature gradient is studied.