Sychikova Y. Morphological properties of nanostructures formed on the surface of the single-crystal indium phosphide by electrochemical etching

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0413U005382

Thesis Registration Form

0413U005382.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

20-09-2013

Specialized Academic Board

Д 41.051.01

Odessa I.I.Mechnikov National University

Essay

The dissertation is devoted to the development of physical and technological foundations of a porous InP by electrochemical etching of indium phosphide, the study of luminescent, structural and morphological properties of porous layers of InP.. The layers of indium phosphide n-type pore size (10 - 40) nm (for n-InP (100)) and (70 - 150) nm (for n-InP (111)) are obtained. First presented method obtaining porous p-InP by photoelectrochemical etching. The samples of por-InP h-type pore size (30 - 40) nm are obtained.

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Files

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