Mozolyuk M. Phase equilibria and the properties of the compounds in the systems Тl2X–BIIX–DIVX2 and ТlCIIIX2–DIVX2 (BII – Hg, Pb; CIII – Ga, In; DIV – Si, Ge, Sn; X – S, Se)

Phase equilibriums in the Тl2X–BIIX–DIVX2 and ТlCIIIX2–DIVX2 (BII – Hg, Pb; CIII – Ga, In; DIV – Si, Ge, Sn; X – S, Se) systems at 520 K have been investigated by using of the physic-chemical analysis methods, and the 12 phase diagram of these systems have been constructed for the first time. The crystal structures of the new chalcogenides Tl2HgSiSe4, Tl2HgGeSe4, Tl2HgSnS4, Tl2HgSnSe4, Tl2PbSiS4, and Tl0,5Pb1,75GeS4 have been studied by the powder X-ray diffraction. The crystal structure of the quaternary compound TlInGe3S8 has been investigated by the X-ray single crystal method. The optimum technological conditions for growing of the single crystals of the solid solutions Tl1-xIn1-xSnxS2 (x=0–0.5) and Tl1-xIn1-xSnxSе2 (x=0–0.25) have been developed. Their optical, photoelectrical properties and two-photon absorption have been studied. The single crystals of the Tl1-xIn1-xSnxSе2 can be used as effective materials for nonlinear optical transformation of the infrared laser beams and in photonic lattices.