Danylyuk H. Low-dimensional effects in the electronic properties of thallium chalcogenides

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0414U001613

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

12-03-2014

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

It was established that the shape of the fundamental absorption edge (FAE) of Tl2S crystal corresponds to the Urbach rule. It was proved experimentally that the exponential shape of the FAE is kept even with repeated and prolonged action of uniaxial pressure on Tl2S samples. The ab initio calculations of the energy band structure of Tl2S were carried out in terms of the density functional theory. The complementary analysis of the results of optical studies of Tl2S crystal and of the energy band structure calculations allowed to suggest the physical mechanism of the formation of the exponential FAE in the layered Tl2S crystal.

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