Slobodzyan D. Evolution of structural defects in the surface layer of barrier structures based on p-Si, stimulated by external factors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0414U001614

Thesis Registration Form

0414U001614.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

12-03-2014

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The results of the research and the analysis of electro-physical characteristics surface-barrier structures on the base of p-Si for electronic grade silicon and solar grade silicon are represented. A study of radiation-and magneto-stimulated changes in electrophysical characteristics at presence and absence of the dislocations stress field was carried out. The researches of defects with deep energy levels in the bandgap of silicon using capacitive-modulation spectroscopy are represented. Evolution of these defects under the influence X-irradiation is described. It is shown the presence of micro and nanoinclusion on the surface of solar grade silicon.

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Files

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dis.doc

dis.doc

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