Kudrynskyi Z. Formation and properties of nanostructures based on layered crystals of indium and gallium selenides

The thesis is devoted to the investigation of peculiarities of the formation and physical properties of the nanostructures fabricated on the basis of GaSe, InSe and In2Se3 layered crystals. Quantum confinement effects were for the first time investigated in mechanically exfoliated InSe nanosheets. The morphology and phase composition of the nanostructures formed onto the van der Waals surface (0001) of GaSe as a result of annealing in sulfur vapor were investigated. For the first time the photosensitive heterojunctions n-CdO-p-InSe(GaSe) were fabricated and their properties were studied. The processes of accumulation and transport of charge carriers in the hybrid structures formed on the basis of GaSe layered semiconductor with nanoscale KNO3 ferroelectric inclusions were investigated. The influence of external magnetic field on the process of electrochemical intercalation of indium selenides by cobalt was studied. It was established that InSe and GaSe crystals can be intercalated by rubidium nitrate. In addition, it was established that the GaSe<RbNO3> nanocomposite has energy-storage properties.