Krukovskyi R. Modification of galvanomagnetic properties of multilayer structures based on GaAs, InP, InAs for elements of electronic equipment devices

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0415U001988

Thesis Registration Form

0415U001988.pdf

Applicant for

Krukovskyi Rostyslav Semenovich

Specialization

05.27.06 - Технологія, обладнання та виробництво електронної техніки

Date of defense

26-03-2015

Specialized Academic Board

Д35.052.13

Essay

The dissertation is dedicated to the experimental research of the common influence of isovalent and amphoteric impurities as well as modulation of parameters of technological process on galvanomagnetic parameters of GaAs, InP, InAs binary compounds and their solid solutions.

Thesis supervisor

Vakiv Nikolai

Official opponents

Вербицький Володимир Григорович
Лозінський Володимир Борисович

Files

aref.doc

dis.doc

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