Lys R. Radiation and strain-stimulated changes of the p-Si crystals surface layer properties

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0415U004401

Thesis Registration Form

0415U004401.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

01-07-2015

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The work investigates a process of defect restructuring of p-Si crystals' surface layer stimulated by X-irradiation and elastic mechanical stress. For the first time, the effect of "radiation memory" has been revealed in mono-axial deformed crystals. The depths of the energy levels of structural defects, cross section of carrier capture and their radiation-stimulated changes have been defined. For the first time, the formation of aggregates of impurity-vacancy complexes and interstitial atoms in the form of equally oriented square pyramid (ranging in size from 1 to 10 microns) have been revealed on the surface (111) of the p-Si experimental samples for solar energy.

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Files

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