Milovanov J. Electrical and luminescence properties of composite structures based on porous silicon and titan oxide.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0415U004816

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

29-09-2015

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

The manufacture technology of composite pelleting structures of nanosilicon in SiO2 and TiO2 disperse matrices on the basis of which it is possible to create effective moisture sensors is worked out. For the first time the method of graphic-analytical processing of the impedance time dependences under the dynamic adsorption/desorption of alcohol and water vapor is justified and the rate of parameters change of composite structures based on 1) microcrystalline silicon, 2) microcrystalline and porous silicon under the dynamic adsorption-desorption influence of external agents are determined. The role of the localized states in the processes of degradation and passivation of heterostructures with PS in vacuum and different atmospheres - air, Ar, N2, CO2, O2 were determined. The parameters of deep levels in the contact structures based on meso- and nano-porous silicon were determined. It was shown that the deep traps of acceptor-type mesoporous Si layers can be completely excluded from the relaxation process during the adsorption of acceptor type oxygen molecule. For the first time the technology of LaF3 monolayers application on mesoporous silicon by successive ionic layer deposition is proposed. The formation of even a few LaF3 monolayers on the surface of mesoporous silicon leads to the formation of the luminescent layer of porous silicon and the creation of passivating and protective layer on the porous silicon surface. The technique of cadmium sulfide nanoparticles deposition in a matrix of porous silicon is worked out.

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