Syngaivska G. High-field and high-frequency transport of charge carriers in semiconductor structures based on GaN: Monte Carlo simulation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U000076

Thesis Registration Form

0416U000076.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

29-12-2015

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

The thesis presents the results of the theoretical investigations of kinetic phenomena that occur in epitaxial GaN structures with low carrier concentration when the carrier distribution function is strongly nonequilibrium. It is determined the conditions for the formation of the streaming and negative differential conductivity, it is analysed the influence of magnetic field on these effects. Based on Monte Carlo method it is proposed an original method of calculating the dynamic differential conductivity, which characterizes the response of the electron subsystem on the high-frequency spatially-periodic perturbation.

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Files

Aref.doc

dis.doc

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