Lytvynenko I. Physical processes in device structures with perpendicular magnetic anisotropy

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U003460

Thesis Registration Form

0416U003460.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

03-06-2016

Specialized Academic Board

Д 55.051.02

Sumy State University

Essay

The thesis is devoted to complex research of structural, magnetic and magneto-resistive properties of thin film systems with perpendicular magnetic anisotropy (PMA): multilayers Co/Ni, the spin-valves and magnetic tunnel junctions (MTJ) on their basis, as well as epitaxial tunnel junctions based on Fe and MgO. The thesis shows the optimal conditions for the formation of film systems with PMA and studies their magnetic and magnetoresistive properties under the influence of temperature, magnetic and electric fields.

Read more

Files

aref.pdf

dis.pdf

Similar theses

0421U103746

Shutylieva Olha V.

The phase composition, magnetoresistive and magnetic properties of devices structures based on Ni and Co and Dy or Bi

0421U103438

Opolonin Oleksandr D.

Principles of characterization of materials by effective atomic number in radiographic control

0521U101782

Tsybrii Zinoviya F

Physical and technological grounds of IR and THz HgCdTe-detectors and IR blocking elements development

0521U101665

Humeniuk-Sychevska Zhanna V.

Optoelectronic properties of low-dimensional structures based on narrow-gap semiconductors in the IR and THz spectral ranges

0421U102655

Yehorov Vadym A.

Improving metrological and operational characteristics of elements and systems of atomic emission spectral analysis