Kushlyk M. Deformation processes and dislocation-related electroluminescence in the surface layers of p-Si crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U004556

Thesis Registration Form

0416U004556.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

20-10-2016

Specialized Academic Board

Д35.051.09

Essay

The work devoted to the establishment of dislocation-related luminescence nature of light emitting structures based on p-Si. The paper presents research of defect subsystem restructuring in subsurface layer of these structures under the action of local and external elastic deformation, plastic deformation and high temperature annealing in the flow oxygen atmosphere. This paper proposed methods of manufacturing stable light emitting structures in a wide temperature range and relatively high energy efficiency of radiation. The physical mechanisms of defect subsystem restructuring in the silicon surface layer were proposed. Summary effect of these mechanisms explains improve of the luminescence efficiency.

Read more

Files

aref.pdf

dis.pdf

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures