Hrypa A. Radiation-stimulated processes in silicon transistor thermosensors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U005155

Thesis Registration Form

0416U005155.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

01-07-2016

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The work is devoted to the research and establishment of regularities of changes in fundamental electrophysical properties of silicon transistor thermosensors under the action of radiation, temperature and relaxation processes as well as to the development of recommendations for the improvement of their radiation resistance. It is shown that at the initial stage of irradiation a superficial component of the radiation-induced changes dominates a volumetric one. A method of increasing radiation resistance of transistor thermosensors has been suggested.

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Files

Avtoreferat_Hrypa.pdf

Dissertation_Hrypa.pdf

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