Novosad O. Electrical, photoelectrical and optical properties of Cu1-xZnxInSe2 and Cu1-xZnxInS2 single crystals and barrier structures on their basis.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U005461

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

05-10-2016

Specialized Academic Board

Д 26.199.02

V. Lashkaryov Institute of semiconductor physics

Essay

This dissertation is devoted to the research of the electrical, thermo electrical, galvanomagnetic, photoelectrical and optical properties of Cu1-xZnxInSe2 and Cu1-xZnxInS2 solid solutions. And also to the research of the influence of the point defects upon the properties of Cu1-xZnxInSe2 and Cu1-xZnxInS2 single crystals. It is shown that single crystals compounds Cu1-xZnxInSe2 and Cu1-xZnxInS2 can serve as absorbing layer of natural radiation photoconverters. It is established that, in the Cu1-xZnxInS2 and Cu1-xZnxInS2 single crystals and surface-barriers structures of on their based, an increase in the concentration of Zn leads to a smooth change of properties.

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