Sozanskyi M. Synthesis of zinc sulfide and zinc selenide films and the structures on their base

The thesis is devoted to the synthesis of zinc sulfide and zinc selenide semiconductor thin films by chemical deposition method from aqueous solutions of zinc salt. Structural, optical, morphological properties and thickness of ZnS and ZnSe films were investigated by the X-ray diffraction, optical spectroscopy, scanning electron and atomic-force microscopy, profilometry. It is found that the chemical deposition method allows to obtain thin solid semiconductor films of zinc sulfide and zinc selenide on large area substrates at low temperatures. These films have stoichiometric composition. The stripping voltammetry method was used to determine the zinc mass in the semiconductor ZnS and ZnSe thin films. The optimal conditions for their synthesis have been found. Kinetic speed of ZnS and ZnSe synthesis reactions was studied by molecular absorption analysis. The effective activation energies have been identified. Solid solutions films and composite structures are created. They are based on zinc sulfide and zinc selenide chemically deposited films. The phase composition, optical and morphological properties of obtained solid solutions and structures were investigated. It is shown that using of chemical deposition can significantly simplify and reduce the cost of their production process, and could become the basis for the mass production of photosensitive elements. The quantum-chemical modeling of the synthesis process of zinc sulfide and zinc selenide with various complexing agents was done. That allowed to establish the mechanism of films deposition.