Prytchyn O. Models, methods and information technology of monitoring of the distribution of impurities in monocrystalline silicon ingots in process of their growth

The thesis is devoted to the solution of actual scientific task concerning desing of models, methods and information technology of monitoring of the distribution of impurities in monocrystalline silicon ingots in process of their growth. In order to solve the set objective the model of the axial distribution of impurities in silicon ingots was improved. The structure of multi-agent system of virtual monitoring of the axial distribution of impurities in the ingot growth process was developed. The method for determining axial irregularity of the distribution of impurities in silicon ingots was improved. The algorithm of monitoring of the distribution of impurities in silicon ingots, which provides collaboration and coordination of all agents within the proposed multi-agent system was developed. The method of virtual temperature control in the undercrystal zone, based on regression model was improved. The software for solution of task of information support of monitoring of axial uneven of the distribution of impurities in the silicon ingot growth was developed. The information technology for monitoring of the distribution of impurities in silicon ingots during their growth was developed.