Zamuruieva O. Preparation and physical properties of the semiconductors in the system Ag(Tl) - In - Si(Ge) - Se2

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0417U001051

Thesis Registration Form

0417U001051.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-11-2016

Specialized Academic Board

Д 76.051.01

Essay

This research focuses on the impact of cationic substitution on the structural, optical and electrical properties of semiconductors and photovoltaic systems Ag(Tl) - In - Si(Ge) - Se2. Within the scientific work developed conditions of synthesis and crystal growth of complex chalcogenide compounds Ag2In2Si(Ge)Se6 and Tl1-xIn1-xSi(Ge)xSe2 (x = 0,1; 0,2). An X-ray diffraction research, RF and RE spectra. The dependence of changes in the band gap and kinetics of photoconductivity. The proposed model of quality defect centers charge when the temperature in crystals.

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Files

Dis.doc

aref.doc

autoreferat--Автореферат Колiнько.doc

Дис Колінько.doc

Дис Колінько.doc

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