Pazyuk R. Optical and Electrical Properties of Quantum Dots Superlattices Based on АIIIВV Semiconductors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0417U004521

Thesis Registration Form

0417U004521.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

22-09-2017

Specialized Academic Board

Д 76.051.01

Essay

The dependences of the electromagnetic wave absorption coefficient of direct intersubband transitions on frequency, quantum dot size, and interdot distance in the GaAs/AlxGa1-xAs and InAs/GaxIn1-xAs heterosystems are obtained. It is shown that the absorption coefficient is char-acterized by two pronounced peaks at the edges of the absorption band: 2.96-4.45 mm for the GaAs/AlxGa1-xAs superlattice and 4.77-6.56 mm for the InAs/GaxIn1-xAs superlattice. It is proved that the half-width of absorption bands for 2D- and 1D- superlattices is significantly dependent on the angle between the vector of polarization of the incident electromagnetic wave and the fundamental translational vectors.

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Files

Dis.doc

aref.doc

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