Vo D. Identification signs of the spectral composition of radiation of unmasking scatterers in nonlinear radar

It is shown in dissertation, which related to the detection of disabling features of semiconductor dispersers in order to increase the efficiency of the use of nonlinear radars to detect the embedded devices in the field of technical protection of information. The type of radio electronics device has a complex adequate structure of antenna with unsystematized configuration. This “random” antenna qualitatively is ensemble dipole with the different of length and orientation. The elementary dipoles are the drops of radio electronics, track circuit boards, metallized surfaces. By the ratio of the wave length probing signal nonlinear radar, the structures of antenna radio electronics device are classified as “small electrically” (less than an order of magnitude or the wavelength of probing signal is more than) and “commensurate electrically”. Accordingly to the inherence of “small electrically” structure antenna, the effective square of nonlinear scattered of probing signal is small. Method of basic functions finding for similarity of the deformed curves detection and a method of the adjusting functions for minimization of an error of approximating function of nonlinear characteristics family were used for it. The current-voltage characteristics of a semiconductor diode in the scattered deformation influences on the detection range of a single broadband mortgaged device simulator in nonlinear radar. Increasing of influencing power level of the probe signal can lead to "visibility reducing" of simulator for nonlinear radar The method of reference parameters for detecting and identifying mortgage devices based on tunnel diodes is developed, which differs by introducing into the normalized space approximating plane of the amplitudes of the signal in the function of the width of the region of negative differential resistance. Universal model of current-voltage characteristics is described, which is described by the parameter - the degree of proximity to the equilibrium state of the semiconductor device, which describes the family of deformed curves of the semiconductor structure in the composition of the diffuser under the influence of a powerful probe signal. Due to the proposed model, the effect of the inversion of a deformation trait is effectively detected and the reliability of the operation of the nonlinear locator is evaluated. Universal simulator of a mortgage device with nonlinear load and the possibility of varying the voltage of the working point is developed. Modes of the universal simulator are allowed to reproduce the scattering properties of embedded devices, which make the simulator objective in the certification of nonlinear locators. The reliable detection of electronic objects based on the method of identification by the ratio of levels of the re-emitted harmonics. The proposed certification of nonlinear radar uses the simulator on the basis of two-wire flat spiral antenna with a "controlled" nonlinear load. The simulator has broadband, elliptical polarization and directional power transfer. The scattering parameters of the simulator depend on the bias voltage of the working point and the input voltage of semiconductors.