Korkishko R. Improving the technology of silicon solar cell manufacturing to work at increased levels of excitation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0419U000398

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

16-01-2019

Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics

Essay

The thesis is devoted to the study of the features of photoconversion processes in silicon solar cells (SC) at increased levels of excitation and the development on this basis of an improved technology for manufacturing silicon solar cells and solar modules (SM) intended for operation with concentrated solar radiation. The thesis presents the results of experimental and theoretical studies of photoelectric energy conversion processes in high-efficiency silicon SC of combined diffusion-field type and heterojunctions (HIT) SC. It is shown that in order to ensure high photoconversion efficiency of silicon SC at elevated excitation levels, in addition to high generation-recombination, optical and photoelectric parameters, it is important to solve the problem of minimizing the series resistance and decreasing the heating of solar cells due to work with concentrated solar radiation. A modified technological route for fabricating silicon diffusive-field type semiconductors was developed and optimized for operation in the concentrated solar radiation regime with a degree of concentration up to 100Х; using it experimental SC samples were made and their characteristics at elevated excitation levels were investigated. It is shown that such SC have a minimized series resistance, which allowed obtaining of the high values of operational parameters in the range of concentrations С = 1-150Х of full-scale solar radiation.

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