Parkhomenko H. Thin films NiO and heterojunctions based on them

The dissertation is devoted to the establishment of reproducible conditions for the production of thin films of nickel oxide and heterojunctions on their basis, to study their structural, electrical, optical and photoelectric properties under different conditions, to expand the possibilities of their application and to improve their parameters. A study was carried out on phenomena of transfer in thin films of nickel oxide, deposited at different temperatures of substrate 373 K and 523 K, and their optical properties, in a wide temperature range of 77-290 K. The influence of surface treatment of substrates Si on the electrical properties of p-NiO / n-Si heterostructures is shown. Their electrical and photoelectric properties were investigated and the dominant mechanisms of current transfer were established. The electrical parameters of the p-NiO / n-CdTe, p-NiO / p-CdTe, p-NiO / p-Cd1-xZnxTe, p-NiO / n-Cd1-xZnxTe and p-NiO / n-SiC heterojunctions are determined. The dark volt-ampere characteristics of heterojunctions in a wide temperature range are investigated.