Kotyk M. Elements of a microsystem-on-chip structure with a "silicon-on-insulator" structure for biomedical electronics

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0419U002215

Applicant for

Specialization

  • 05.27.01 - Твердотільна електроніка

18-04-2019

Specialized Academic Board

К 76.051.09

Yuriy Fedkovych Chernivtsi National University

Essay

The dissertation is devoted to the research of elements of SoC with the SOI structure for biomedical electronics, including sensory integral elements, and the development of devices for non-invasive blood glucose control (BGC) on their basis, with their use on the basis of glucose uptake of near-infrared radiation with a wavelength of 940 nm. On the basis of the sample of this device, integrated elements for the study of the path of the signal received from the optical sensing element have been developed and modeled. The MSoC, which is a specialized IC crystal, which houses elements of the typical sensor system, is required for filtration, amplification, processing and output, in a read-only form, on the display of the device. The method of calculation of the individual coefficient and programming of the environment of the device is developed, which allows real-time (without reprogramming of the microcontroller) to change the individual coefficient of the glucose index in the blood when adjusting the device for a particular person. The dependence of the intensity of light radiation in the near infrared region on the concentration of BGC and the absorption peak with a wavelength λ = 940 nm were chosen. In order to improve the work of the light-emitting element and increase the duration of the battery life of the device, the modes of pulse-width modulation (PWM) of the ATMega328p microcontroller were investigated, and the optimum for the sensor element (SE) at the wavelength λ = 940 nm was selected, the PWM signal parameters were selected. The noise immunity has been increased when working with photosensitive elements and is equipped with a SE band pass filter with a peak of 940 ± 2 nm. The signal passage is equipped with an electric band pass filter of the III order for transmitting a PWM signal at a frequency of f = 976 Hz, and an OA that is sensitive to small currents.

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