Hladkovskyi V. Properties of the chemically active plasma of capacitive high-frequency discharge in controlled magnetic fields

The work is devoted to the investigated of the parameters of a high-frequency capacitive discharge in controlled magnetic fields. A mechanism is proposed which explains the decrease in the etching rate of silicon from the self-bias voltage and bias voltage. In the basis of this mechanism is the effect of sputtering of the structures of the plasma-chemical reactor, which leads to the blocking of the treated surface by the metal atoms. The effect of the magnetic field on the anisotropy and the etching rate of silicon was investigated. A linear mechanism was established for increasing the etching rate of silicon from a magnetic field strength. It was found that the anisotropy of the etching profile can be controlled by a magnetic field. The change in the emission spectra of an RF discharge plasma as a function of the controlled bias voltage was investigated for the first time. It was established that with an increase in the negative bias voltage of more than 200 V lines of excited metal atoms appear on the plasma emission spectra. At the same time, molecular bands and atomic lines, which belong to the products of dissociation of the working gas, are practically was not observed.