Kondryk O. Effect of radiation and background defects on the properties of GaAs, CdTe, CdZnTe and detectors of ionizing radiation based on them

In the dissertation the numerical modeling method solves an important scientific problem of determining the influence of radiation-stimulated, admixture, background defects and temperature on the electrophysical and detector properties of GaAs, CdTe, CdZnTe. The numerical study and explanation of the behavior of electron mobility µn, specific resistance ρ, Fermi level F, lifetime of the nonequilibrium charge carriers τ, and charge collection efficiency η for detectors based on GaAs, CdTe and CdxZn1-xTe has been made over a wide range of defect concentrations which were determined to produce high quality detectors. The correlation between radiation defects originated in CdTe:Cl, CdZnTe after the hard X-ray irradiation and ρ, η of detectors has been ascertained. The role of radiation defects in the degradation process of detector performances of CdTe:Cl, CdZnTe was determined. An explanation the higher radiation resistance of CdZnTe compared with CdTe:Cl was found.