Bardashevska S. Quantum-dimensional structures based on semiconductor compounds A2B6 / C.

The dissertation presents the results of obtaining and investigation of carbon and semiconductor QDs. For the first time, a technique for obtaining QDs of wide-band semiconductors, in particular CdS and ZnSe in a solid-state carbon matrix, was developed. An investigation of the surface area and total pore volume of the obtained carbon material reveals that the carbon material with such a pore distribution, is most suitable as a solid-state matrix for semiconductor QDs. The size of the «CdS-C» QDs was found. The calculation wasdone assuming that the peaks of photoluminescence were related to the transitions between two the lowest bound electronic states (E1↔E2).The investigation of optical properties of the synthesized carbon quantum dots indicates that their reconstructed fluorescence emission can be achieved either by controlling the sp2-domain size of conjugation or modification of the chemical groups formed on the surface of carbon nanodots.The result of the investigation of the defective subsystem of semiconductor compounds A2B6 is the determination of the predominant type of defects of such a complex.The obtained result indicates that these defects are deep centers that are reflected on the photoluminescence spectra.