Grygoruk O. Nonlinear Modeling of Microwave and Millimeter Wave Circuits based on Submicrometer Heterojunction Transistors.

Thesis is devoted to circuit design methods for microwave and millimeter wave integrated circuits based on heterojunction transistors. Approximated nonlinear models of field-effect and bipolar transistors taking into account physical effects on bounder of heterojunctions and active GaAs, InP, SiGe layer and methods for identification of circuit parameters have been developed. A numerical method for discretization of microelectronic devices mathematical models has been offered to fit circuit's natural oscillations spectrum. Calculation of dynamical regimes and optimization of broad-band conjugation of basic microwave and millimeter wave converters have been carried out taking into consideration technological features for submicrometer solid-state devices.