Barabanov O. Quantum theory of spin-dependent recombination in semiconductors.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0499U001554

Thesis Registration Form

0499U001554.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

24-05-1999

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

The dissertation is devoted of quantum theoty of spin-dependent recombination in semiconductors. The theory is based upon the von-Neumann equation for density operator of electorn pair. The theory is applicable for both Kaplan-Solonom -Mott mechanism of spin-dependent recombination and spin-dependent recombination through the excited triplet states of point defects. The positions and shapes of the peaks of nonequilibrium conductivity are investigated for both mechanisms of spin-dependent recombination. The theory takes into account the hyperfine interaction between the localized electron spins and the spins of neighboring nucleus. This allows to use the theory for analysis of the real spectra of electrically-detected magnetic resonance. Distinctive characteristics of the existing mechanisms of spin-dependet recombination are formed in the dissertation.

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