Krylyuk S. Luminescent properties of short-period quantum-size GaAs/AlAs superlattices

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0499U001684

Thesis Registration Form

0499U001684.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

18-06-1999

Specialized Academic Board

Д 76.051.01

Essay

A condition is proposed to maintain a direct energy gap in GaAs/AlAs superlattices with ultrathin layers. An exciton photoluminescence polarization mechanism due to interface corrugation is found. Peculiarities of electron-phonon interaction in quasidirect-gap superlattices are studied. In superlattices with different energy gap structure, types of excitons are identified and peculiarities of their recombination are established in the dependence on the layer thicknesses.

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