Korchak Y. Influence of the Me2+ ion (Me = Cu, Co) coordination environment on the optical and physical properties of the A2MeX4 family crystals.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0499U001969

Thesis Registration Form

0499U001969.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

30-06-1999

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

Object of investigation: [NHn(CmH2m+1)4-n]2МеХ4 family crystals (where Me = Cu, Co; X = Cl, Br). Aim of investigation: experimental establishment of correlation between the structure of Me2+ ion coordination environment and the phase properties in crystals. Methods: spectroscopic, dielectric, polarizing and optical, dilatometric. Results: Thermochromic properties of crystal row and influence of ionizing radiation on their were studied. On base of it were proposed for application the [(C2H5)2NH2]2CuCl4 combination in the sensors of ionizing radiation. Inculcation: The results are used at the Ivan Franko L’viv State University for the spectroscopic investigations of new crystal material. Application: thermography and dosimetry.

Read more

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures