Mazur M. Hot-carrier optical emission in silicon barrier structures

Investigation object: silicon barrier structures. Investigation purpose: elucidation of mechanisms of physical processes determined the hot electroluminescence characteristics of silicon barrier structures. Investigation methods and apparatus: spectral and capacitance-voltage studies, monochromators, photodetectors. Theoretical and practical results, novelty: prebreakdown electroluminescence of Si barrier structures both n -, and p-type conductivity is found to have monotone and broad-band emission spectrum. The hot electroluminescence characteristics are obtained under conditions, when excitation of the minority carriers and recombination emission are eliminated. The dominating role of indirect optical transitions of hot carriers is established. It is revealed by electroluminescence methods that energy losses of hot carriers in the barrier region are abnormal small. Hot electroluminescence of silicon can be used in control systems of multicomponent chips. Degree of application: it is planned. Sphere ( area) of application: micro- and optoelectronics.